unisonic technologies co., ltd 7p20 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-288.b 200v p-channel mosfet ? description the 7p20 uses advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. they are also well suited for high efficiency switching dc/dc converters. ? features * r ds(on) Q 0.69 ? @v gs = -10 v * ultra low gate charge ( typical 19 nc ) * low reverse transfer capacitance ( c rss = typical 25 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 7p20l-tn3-r 7p20g-tn3-r to-252 g d s tape reel
7p20 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-288.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -200 v gate-source voltage v gss 30 v continuous drain current i d -5.7 a pulsed drain current (note 2) i dm -22.8 a avalanche current (note 2) i ar -5.7 a single pulsed avalanche energy (note 3) e as 570 mj repetitive avalanche energy (note 2) e ar 5.5 mj peak diode recovery dv/dt (note 4) dv/dt -5.5 v/ns t a = 25c 2.5 power dissipation t c = 25c p d 55 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) l=26.3mh, i as =-5.7a, v dd =-50v, r g =25 ? i sd Q -7.3a, di/dt Q 300a/ s, v dd Q bv dss ? thermal data parameter symbol ratings unit junction to ambient ja 100 c /w junction to case jc 2.27 c /w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -200 v breakdown voltage temperature coefficient bv dss / t j i d =-250a, referenced to25c -0.1 v/c drain-source leakage current i dss v ds =-200v, v gs =0v -1 a gate-source leakage current i gss v ds =0v, v gs =30v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-resistance r ds(on) v gs =-10v, i d =-2.85a 0.54 0.69 ? forward transconductance g fs v ds =-40v, i d =-2.85a (note 1) 3.7 s dynamic parameters input capacitance c iss 590 770 pf output capacitance c oss 140 180 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1.0mhz 25 35 pf switching parameters total gate charge q g 19 25 nc gate source charge q gs 4.6 nc gate drain charge q gd v ds =-160v, v gs =-10v, i d =-7.3a (note 1, 2) 9.5 nc turn-on delay time t d(on) 15 40 ns turn-on rise time t r 110 230 ns turn-off delay time t d(off) 30 70 ns turn-off fall-time t f v dd =-100v, i d =-7.3a, r g =25 ? (note 1, 2) 42 90 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =-5.7a, v gs =0v -5.0 v maximum body-diode continuous current i s -5.7 a maximum pulsed drain-source diode forward current i sm -22.8 a body diode reverse recovery time t rr 180 ns body diode reverse recovery charge q rr v gs =0v, i s =-7.30 a di f /dt=100a/s (note 1) 1.07 c note: 1. pulse test : pulse width Q 300 s, duty cycle Q 2% note: 2. essentially independent of operating temperature
7p20 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-288.b ? test circuits and waveforms l v dd v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period compliment of d.u.t. (n-channel) fig. 1b peak diode recovery dv/dt waveforms
7p20 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-288.b ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r g -10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
7p20 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-288.b ? typical characeristics drain current vs. drain-source breakdown voltage 0 drain current, -i d (a) drain-source breakdown voltage, -bv dss (v) 50 0 1 0 0 50 drain current vs. gate threshold voltage drain current, -i d (a) gate threshold voltage, -v th (v) 34 100 150 200 250 300 50 150 200 250 300 100 25 100 150 200 250 drain current, -i d (a) drain current, -i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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